Cypress CY62157ESL Manuale Utente

CY62157ESL MoBL®8-Mbit (512K x 16) Static RAMCypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600Document #

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 10 of 12Truth TableCE WE OE BHE BLE Inputs/Outputs Mode PowerH X X X X High-Z Deselect/Power down S

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 11 of 12Package DiagramsFigure 8. 44-Pin TSOP II, 51-8508751-85087-*A[+] Feedback [+] Feedback

Document #: 001-43141 Rev. ** Revised January 04, 2008 Page 12 of 12MoBL is a registered trademark and More Battery Life is a trademark of Cypress Sem

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 2 of 12Pin ConfigurationFigure 1. 44-Pin TSOP II (Top View)Product Portfolio Product Range VCC Ran

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 3 of 12Maximum RatingsExceeding the maximum ratings may impair the useful life of thedevice. These

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 4 of 12CapacitanceTested initially and after any design or process changes that may affect these pa

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 5 of 12Data Retention Characteristics Over the Operating RangeParameter Description Conditions Min

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 6 of 12Switching Characteristics Over the Operating Range [9] Parameter Description45 nsUnitMin Max

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 7 of 12Switching WaveformsFigure 2. Read Cycle No.1: Address Transition Controlled. [14, 15]Figure

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 8 of 12Figure 4. Write Cycle No 1: WE Controlled [13, 17, 18]Figure 5. Write Cycle 2: CE Controll

CY62157ESL MoBL®Document #: 001-43141 Rev. ** Page 9 of 12Figure 6. Write Cycle 3: WE controlled, OE LOW [18]Figure 7. Write Cycle 4: BHE/BLE Contro